6418 Mosfet

Type Designator: AON6418

6418 Mosfet Gate
6418 Mosfet Pdf
6418 Mosfet Drive
6418 Mosfet W
6418 Mosfet N

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 25 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 1.8 V

Maximum Drain Current |Id|: 32 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 4.8 nS

4PCS AON6418 MOSFET N CH 30V 36A SDMOS 6418. $5.40 + $3.00 Shipping. 30V N-Channel MOSFET General Description Product Summary VDS I D (at V GS =10V) 30A R DS(ON) (at V GS =10V).

Drain-Source Capacitance (Cd): 526 pF

Maximum Drain-Source On-State Resistance (Rds): 0.005 Ohm

Package: DFN5X6EP

AON6418 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

AON6418 Datasheet (PDF)

0.1. aon6418.pdf Size:306K _aosemi

AON641830V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 32A Low Gate Charge RDS(ON) (at VGS=10V)

8.1. aon6414.pdf Size:156K _aosemi

AON641430V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON6414 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 30Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)

8.2. aon6416.pdf Size:268K _aosemi

AON641630V N-Channel MOSFETTMSDMOSGeneral Description Product SummaryVDS30VThe AON6416 is fabricated with SDMOSTM trench ID (at VGS=10V) 22Atechnology that combines excellent RDS(ON) with low gatecharge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V)

8.3. aon6414a.pdf Size:268K _aosemi

AON6414A30V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON6414A uses advanced trench technology toprovide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 30Asuitable for use as a high side switch in SMPS and RDS(ON) (at VGS=10V)

8.4. aon6414al.pdf Size:384K _aosemi

AON6414A30V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON6414A uses advanced trench technology toprovide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 50Asuitable for use as a high side switch in SMPS and RDS(ON) (at VGS=10V)

8.5. aon6410.pdf Size:158K _aosemi

AON641030V N-Channel MOSFETGeneral Description Product SummaryThe AON6410 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON), low gate charge.ThisID = 24A (VGS = 10V)device is suitable for use as a high side switch inRDS(ON)

8.6. aon6413.pdf Size:278K _aosemi

AON641330V P-Channel MOSFETGeneral Description Product SummaryVDS Latest Trench Power MOSFET technology -30V Very Low RDS(ON) at 4.5V VGS ID (at VGS=-10V) -32A Low Gate Charge RDS(ON) (at VGS=-10V)

8.7. aon6411.pdf Size:262K _aosemi

6418 Mosfet Gate

AON641120V P-Channel MOSFETGeneral Description Product SummaryVDS-20The AON6411 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS= -10V) -85Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS= -10V)

Datasheet: AON7514, AON7702, AON6200, AON6206, AON6408, AON6410, AON6414, AON6414AL, APT50M38JLL, AON6422, AON6454, AON6514, AON6534, AON6542, AON6702, AON6704A, AON6708.

6418 Mosfet Pdf

6418 Mosfet Drive

6418 Mosfet W

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6418 Mosfet N

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